1994. 6. 24 1/4 semiconductor technical data ktc3197 epitaxial planar npn transistor revision no : 0 high frequency application. vhf band amplifier application. features high gain : g pe =33db(typ.) (f=45mhz). good linearity of h fe . maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 4 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 - - 0.1 collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 25 - - v dc current gain h fe v ce =12.5v, i c =12.5ma 20 - 200 saturation voltage collector-emitter v ce(sat) i c =15ma, i b =1.5ma - - 0.2 v base-emitter v be(sat) - - 1.5 collector output capacitance c ob v cb =10v, i e =0, f=1mhz 0.8 - 2.0 pf collector-base time constant c c rbb ? v cb =10v, i e =-1ma, f=30mhz - - 25 ps transition frequency f t v ce =12.5v, i c =12.5ma 300 - - mhz power gain (fig.1) g pe v cc =12.5v, i e =-12.5ma f=45mhz 28 - 36 db
1994. 6. 24 2/4 ktc3197 revision no : 0 input r =50 ? g 0.05 f 2.2k ? i e 7pf cc v 3 2 1 4 5 output r =50 l t : 3.0t 1 - 2 3 - 2 8.0t 5 - 4 1.0t 0.005 f 10pf coil data 0.20mm cu wire l=12 h with m-5 core pe power gain g (db) 0 12 collector 0 c 15 10 5 0 base current b static characteristics collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v -2 emitter current i (ma) e pe g - i (see fig 1) h - i c collector current i (ma) 0.2 1 0 30 100 300 fe dc current gain h 10 current i (ma) v (v) voltage be base-emitter i (ma) voltage v (v) ce collector-emitter 20 0.1 0.2 0.3 16 20 0.4 0.8 1.2 4 8 v = 12.5v ce 0.3 0.25 0.2 0.15 0.1 i =0.05ma b 0 c e v =1 2. 5 v common emitter ta=25 c 2 4 6 8 10 12 14 2 4 6 8 10 12 14 16 common emitter ta=25 c 0.3 0.25 0.2 0.15 0.1 i =0.05ma b 0 e -4 -6 -8 -10 -12 -14 -16 10 20 30 40 common emitter v =12.5v f=45mhz ta=25 c cc fe c 0.5 1 3 30 50 100 v =12.5v ce ce v =3v common emitter ta=25 c 0.005 f fig. 1 45mhz g pe test circuit
1994. 6. 24 3/4 ktc3197 revision no : 0 f - i c collector current i (ma) 0.2 1 10 50 100 t transition ferquency tc f (mhz) 0.5 3 30 5 300 500 1k 2k common emitter v =12.5v ta=25 c ce c - v cb collector-base voltage v (v) 0.2 3 10 50 ob 1 collector output capacitance 20 ob cb c (pf) 0.5 1 10 3 5 f=1mhz ta=25 c g , c - i oe oe c collector current i (ma) 4 oe 0 output conductance g ( s) c 6 8 10 12 14 16 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 common emitter f=45mhz ta=25 c v =10v ce 12.5 15 g oe ce v =10v oe c 15 12.5 12.5 15 c oe v =10v ce oe g 15 12.5 ce v =10v ta=25 c f=58mhz emitter common 7 6 5 4 3 2 1 0 140 120 100 80 60 40 20 16 14 12 10 8 6 c output conductance g ( s) 0 oe 4 collector current i (ma) c oe oe g , c - i output capacitance c (pf) oe oe output capacitance c (pf) 5 4 input conductance g (ms) ie c ie ie g , c - i collector current i (ma) c 7 9 11 13 15 6 8 10 12 common emitter f=45mhz ta=25 c v =10v 12.5 15 c ce ie ie g 15 12.5 ce v =10v v =15v ce 12.5 10 c ie ie ce g 15 12.5 v =10v ta=25 c f=58mhz common emitter 12 10 8 6 15 13 11 9 7 c collector current i (ma) g , c - i ie ie c ie input conductance g (ms) 4 5 24 20 16 12 8 ie input capacitance c (pf) input capacitance c (pf) ie 8 12 16 20 24
1994. 6. 24 4/4 ktc3197 revision no : 0 -0.38 -0.34 -0.30 -0.26 -0.22 -0.18 -0.14 16 14 12 10 8 6 c reverse transfer conductance g (ms) -0.10 re 4 collector current i (ma) c re re g , b - i re reverse transfer susceptance b (ms) common emitter f=45mhz ta=25 c v =10v ce 12.5 15 re b g re ce v =10v 15 12.5 12.5 15 v =10v ce re g b re 15 12.5 ce v =10v ta=25 c f=58mhz common emitter reverse transfer susceptance b (ms) re g , b - i re re c collector current i (ma) 4 re -0.24 reverse transfer conductance g (ms) c 6 8 10 12 14 16 -0.28 -0.32 -0.36 -0.40 -0.44 -0.48 -0.52 re g b re 15 12.5 ce v =10v ta=25 c f=45mhz common emitter g (ms) fe g , b - i fe fe c collector current i (ma) 4 60 forward transfer conductance c 6 8 10 12 14 16 80 100 120 140 160 12.5 15 v =10v ce -160 -140 -120 -100 -80 -60 forward transfer susceptance fe b (ms) b (ms) fe forward transfer susceptance -60 -80 -100 -120 -140 -160 160 140 120 100 80 16 14 12 10 8 6 c forward transfer conductance 60 4 collector current i (ma) c fe fe g , b - i fe g (ms) fe b g fe ta=25 c f=58mhz common emitter v =10v ce v =10v ce 12.5 15 12.5 15
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